Scalable focused ion beam creation of nearly lifetime-limited single quantum emitters in diamond nanostructures
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ncomms15376.pdf
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Author(s)
Sipahigil, Alp
Evans, Ruffin E.
Sukachev, Denis D.
Nguyen, Christian T.
Pacheco, Jose L.
Camacho, Ryan M.
Bielejec, Edward S.
Lukin, Mikhail D.
Schroder, Tim
Trusheim, Matthew E
Date Issued
May 2017
Journal
Nature Communications
Publisher
Nature Publishing Group
Citation
Schröder, Tim et al. “Scalable Focused Ion Beam Creation of Nearly Lifetime-Limited Single Quantum Emitters in Diamond Nanostructures.” Nature Communications 8 (May 2017): 15376 © 2017 The Author(s)
Version
Final published version
Abstract
The controlled creation of defect centre - nanocavity systems is one of the outstanding challenges for efficiently interfacing spin quantum memories with photons for photon-based entanglement operations in a quantum network. Here we demonstrate direct, maskless creation of atom-like single silicon vacancy (SiV) centres in diamond nanostructures via focused ion beam implantation with ∼32 nm lateral precision and < 50 nm positioning accuracy relative to a nanocavity. We determine the Si+ ion to SiV centre conversion yield to be ∼2.5% and observe a 10-fold conversion yield increase by additional electron irradiation. Low-temperature spectroscopy reveals inhomogeneously broadened ensemble emission linewidths of ∼51 GHz and close to lifetime-limited single-emitter transition linewidths down to 126±13 MHz corresponding to ∼1.4 times the natural linewidth. This method for the targeted generation of nearly transform-limited quantum emitters should facilitate the development of scalable solid-state quantum information processors.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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Creative Commons Attribution 4.0 International License
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DOI of Published Version
https://doi.org/10.1038/NCOMMS15376
