The physics and technology of the InAlAs/n⁺-InP heterostructure field-effect transistor
Name
32875637-MIT.pdf
Description
Full printable version
Size
7.03 MB
Format
Adobe PDF
Checksum (MD5)
8353b45654d1edc925cc876469142115
Author(s)
Greenberg, David Ross
Advisor(s)
Jesús A. del Alamo.
Date Issued
1995
Publisher
Massachusetts Institute of Technology
Description
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1995.
Includes bibliographical references (p. 135-140).
Subjects
Electrical Engineering and Computer Science
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
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