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Bright and photostable single-photon emitter in silicon carbide

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Author(s)
Tran, Toan Trong
•
Aharonovich, Igor
•
Lienhard, Benjamin
•
Schroder, Tim
•
Mouradian, Sara L
•
Dolde, Florian
•
Englund, Dirk R.
Alternative Title
Bright and photostable single-photon emitter in silicon carbide
Date Issued
July 2016
Journal
Optica
Publisher
Optical Society of America
Citation
Lienhard, Benjamin et al. “Bright and Photostable Single-Photon Emitter in Silicon Carbide.” Optica 3, 7 (July 13, 2016): 768-774 © 2016 Optical Society of America
Version
Original manuscript
Abstract
Single-photon sources are of paramount importance in quantum communication, quantum computation, and quantum metrology. In particular, there is great interest in realizing scalable solid-state platforms that can emit triggered photons on demand to achieve scalable nanophotonic networks. We report on a visible-spectrum single-photon emitter in 4H silicon carbide (SiC). The emitter is photostable at room and low temperatures, enabling photon counts per second in excess of 2×10⁶ from unpatterned bulk SiC. It exists in two orthogonally polarized states, which have parallel absorption and emission dipole orientations. Low-temperature measurements reveal a narrow zero phonon line (linewidth <0.1  nm) that accounts for >30% of the total photoluminescence spectrum.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Research Laboratory of Electronics
Terms of Use
Creative Commons Attribution-Noncommercial-Share Alike
http://creativecommons.org/licenses/by-nc-sa/4.0/
Persistent DSpace Link
http://hdl.handle.net/1721.1/111014
DOI of Published Version
https://doi.org/10.1364/optica.3.000768
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