Bright and photostable single-photon emitter in silicon carbide
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Author(s) • • • • • •
Tran, Toan Trong
Aharonovich, Igor
Lienhard, Benjamin
Schroder, Tim
Mouradian, Sara L
Dolde, Florian
Englund, Dirk R.
Alternative Title
Bright and photostable single-photon emitter in silicon carbide
Date Issued
July 2016
Journal
Optica
Publisher
Optical Society of America
Citation
Lienhard, Benjamin et al. “Bright and Photostable Single-Photon Emitter in Silicon Carbide.” Optica 3, 7 (July 13, 2016): 768-774 © 2016 Optical Society of America
Version
Original manuscript
Abstract
Single-photon sources are of paramount importance in quantum communication, quantum computation, and quantum metrology. In particular, there is great interest in realizing scalable solid-state platforms that can emit triggered photons on demand to achieve scalable nanophotonic networks. We report on a visible-spectrum single-photon emitter in 4H silicon carbide (SiC). The emitter is photostable at room and low temperatures, enabling photon counts per second in excess of 2×10⁶ from unpatterned bulk SiC. It exists in two orthogonally polarized states, which have parallel absorption and emission dipole orientations. Low-temperature measurements reveal a narrow zero phonon line (linewidth <0.1 nm) that accounts for >30% of the total photoluminescence spectrum.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Research Laboratory of Electronics
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Creative Commons Attribution-Noncommercial-Share Alike
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DOI of Published Version
https://doi.org/10.1364/optica.3.000768