Modelling hysteresis in vanadium dioxide oscillators
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Author(s)
Datta, S.
Maffezzoni, P.
Narayanan, V.
Shukla, N.
Raychowdhury, A.
Daniel, Luca
Date Issued
May 2015
Journal
Electronics Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Maffezzoni, P., S. Datta, V. Narayanan, N. Shukla, A. Raychowdhury, and L. Daniel. “Modelling Hysteresis in Vanadium Dioxide Oscillators.” Electronics Letters 51, no. 11 (May 28, 2015): 819–820.
Version
Author's final manuscript
Abstract
An original circuit-level model of two-terminal vanadium dioxide electron devices exhibiting electronic hysteresis is presented. Such devices allow realisation of very compact relaxation nano-oscillators that potentially can be used in bio-inspired neurocomputing. The proposed model is exploited to determine the parameters, values that ensure stable periodic oscillations.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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Creative Commons Attribution-Noncommercial-Share Alike
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DOI of Published Version
https://doi.org/10.1049/el.2015.0025
