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High-speed graphene interconnects monolithically integrated with CMOS ring oscillators operating at 1.3GHz

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Author(s)
Chen, Xiangyu
•
Lee, Kyeong-Jae
•
Akinwande, Deji
•
Close, Gael F.
•
Yasuda, Shinichi
•
Paul, Bipul
•
Fujita, Shinobu
•
Kong, Jing
•
Wong, H. -S. Philip
Date Issued
March 2010
Journal
2009 IEEE International Electron Devices Meeting (IEDM)
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Xiangyu Chen et al. “High-speed Graphene Interconnects Monolithically Integrated with CMOS Ring Oscillators Operating at 1.3GHz.” IEEE, 2009. 1–4. © Copyright 2009 IEEE
Version
Final published version
Abstract
We have successfully experimentally integrated graphene interconnects with commercial 0.25 ¿m technology CMOS ring oscillator circuit using conventional fabrication techniques, and demonstrated high speed on-chip graphene interconnects that operates above 1 GHz.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1109/IEDM.2009.5424293
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