Significant Reduction of Lattice Thermal Conductivity by the Electron-Phonon Interaction in Silicon with High Carrier Concentrations: A First-Principles Study
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PhysRevLett.114.115901.pdf
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6.59 MB
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Author(s)
Liao, Bolin
Qiu, Bo
Zhou, Jiawei
Esfarjani, Keivan
Chen, Gang
Huberman, Samuel C.
Date Issued
March 2015
Journal
Physical Review Letters
Publisher
American Physical Society
Citation
Liao, Bolin, et al. "Significant Reduction of Lattice Thermal Conductivity by the Electron-Phonon Interaction in Silicon with High Carrier Concentrations: A First-Principles Study." Phys. Rev. Lett. 114, 115901 (March 2015). © 2015 American Physical Society
Version
Final published version
Abstract
The electron-phonon interaction is well known to create major resistance to electron transport in metals and semiconductors, whereas fewer studies are directed to its effect on phonon transport, especially in semiconductors. We calculate the phonon lifetimes due to scattering with electrons (or holes), combine them with the intrinsic lifetimes due to the anharmonic phonon-phonon interaction, all from first principles, and evaluate the effect of the electron-phonon interaction on the lattice thermal conductivity of silicon. Unexpectedly, we find a significant reduction of the lattice thermal conductivity at room temperature as the carrier concentration goes above 10[superscript 19] cm[superscript −3] (the reduction reaches up to 45% in p-type silicon at around 10[superscript 21] cm[superscript −3]), a range of great technological relevance to thermoelectric materials.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
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DOI of Published Version
https://doi.org/10.1103/PhysRevLett.114.115901
