InGaAsN/GaAs Quantum-well Laser Diodes
Name
IMST010.pdf
Size
286.86 KB
Format
Adobe PDF
Checksum (MD5)
451f085d67bfd32819a43823de7df5ff
Author(s)
Wang, S.Z.
Yoon, Soon Fatt
Date Issued
January 2004
Series/Report no.
Innovation in Manufacturing Systems and Technology (IMST);
Abstract
GaAs-based InGaAsN/GaAs quantum well is found to be very sensitive to growth conditions and ex-situ annealing processes. Annealing could drastically increase the optical quality of GaAs-based InGaAsN/GaAs quantum well. As an end of this paper, some results on InGaAsN/GaAsN/AlGaAs laser diodes are also presented.
Subjects
InGaAsN/GaAs
quantum well
molecular beam epitaxy
laser diode
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