Integration of single photon emitters in 2D layered materials with a silicon nitride photonic chip
Name
s41467-019-12421-0.pdf
Description
Published version
Size
1.05 MB
Format
Adobe PDF
Checksum (MD5)
3d0725748bd459384ef796193175c0ad
Author(s)
Peyskens, Frederic Olivier
Chakraborty, Chitraleema
Englund, Dirk R.
Date Issued
September 2019
Journal
Nature Communications
Publisher
Springer Science and Business Media LLC
Citation
Peyskens, Frédéric et al. “Integration of single photon emitters in 2D layered materials with a silicon nitride photonic chip.” Nature Communications, 10, 1 (September 2019): 4435 © 2019 The Author(s)
Version
Final published version
Abstract
Photonic integrated circuits (PICs) enable the miniaturization of optical quantum circuits because several optic and electronic functionalities can be added on the same chip. Integrated single photon emitters (SPEs) are central building blocks for such quantum photonic circuits. SPEs embedded in 2D transition metal dichalcogenides have some unique properties that make them particularly appealing for large-scale integration. Here we report on the integration of a WSe2 monolayer onto a Silicon Nitride (SiN) chip. We demonstrate the coupling of SPEs with the guided mode of a SiN waveguide and study how the on-chip single photon extraction can be maximized by interfacing the 2D-SPE with an integrated dielectric cavity. Our approach allows the use of optimized PIC platforms without the need for additional processing in the SPE host material. In combination with improved wafer-scale CVD growth of 2D materials, this approach provides a promising route towards scalable quantum photonic chips.
MIT Department
Massachusetts Institute of Technology. Research Laboratory of Electronics
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
Creative Commons Attribution 4.0 International license
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DOI of Published Version
https://doi.org/10.1038/S41467-019-12421-0
