Exciton-phonon coupling in individual GaAs nanowires studied using resonant Raman spectroscopy
Name
Brewster-2009-Exciton.pdf
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1.99 MB
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Checksum (MD5)
6ae37fe4698580962e5e44ce02fa7c6e
Author(s)
Schimek, Oliver
Reich, Stephanie
Brewster, Megan Marie
Gradecak, Silvija
Date Issued
November 2009
Journal
Physical Review B
Publisher
American Physical Society
Citation
Brewster, Megan et al. “Exciton-phonon coupling in individual GaAs nanowires studied using resonant Raman spectroscopy.” Physical Review B 80.20 (2009): 201314. © 2009 The American Physical Society
Version
Final published version
Abstract
The Fröhlich coupling strength of individual GaAs nanowires is investigated by resonant micro-Raman spectroscopy measurements near the direct bandgap E[subscript g]2. Large 2LO/1LO intensities up to 5.7 are observed in an individual GaAs nanowire. A 2LO resonance profile of the GaAs nanowire agrees well with a two-phonon-scattering model, suggesting excitonic scattering. These results advance the understanding of electron-phonon coupling and exciton scattering in quasi-one-dimensional systems and in GaAs at E[subscript g], allowing for the development and optimization of nanowire optoelectronic devices.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
http://dx.doi.org/10.1103/PhysRevB.80.201314
