Split-well direct-phonon terahertz quantum cascade lasers
Name
PublishedOnline.pdf
Description
Published version
Size
1.27 MB
Format
Adobe PDF
Checksum (MD5)
88c1331ae50e824b07d7c60451c4ccc9
Author(s)
Albo, Asaf
Flores, Yuri V
Hu, Qing
Reno, John L
Date Issued
2019
Journal
Applied Physics Letters
Publisher
AIP Publishing
Version
Final published version
Abstract
© 2019 Author(s). We present a so-called "split-well direct-phonon" active region design for terahertz quantum cascade lasers (THz-QCLs). Lasers based on this scheme profit from both elimination of high-lying parasitic bound states and resonant-depopulation of the lower laser level. Negative differential resistance is observed at room temperature, which indicates that each module behaves as a clean 3-level system. We further use this design to investigate the impact of temperature on the dephasing time of GaAs/AlGaAs THz-QCLs.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Research Laboratory of Electronics
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1063/1.5089854
