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  5. Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors

Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors

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RLE_PR_139_01_01s_02.pdf

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Author(s)
del Alamo, Jesús A.
•
Somerville, Mark H.
•
Ernst, Alexander N.
•
Zeidenberg, Lisa B.
Date Issued
1996-01-01 to 1996-12-31
Publisher
Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)
Series/Report no.
Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 139
Description
Contains an introduction, a report on one research project and a list of publications and conference papers.
Terms of Use
Copyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved.
Persistent DSpace Link
http://hdl.handle.net/1721.1/57368
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