Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors
Name
RLE_PR_139_01_01s_02.pdf
Size
1.15 MB
Format
Adobe PDF
Checksum (MD5)
c3d664a06f9bbdc43093bb8b8e868ee6
Author(s) • • •
del Alamo, Jesús A.
Somerville, Mark H.
Ernst, Alexander N.
Zeidenberg, Lisa B.
Date Issued
1996-01-01 to 1996-12-31
Publisher
Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)
Series/Report no.
Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 139
Description
Contains an introduction, a report on one research project and a list of publications and conference papers.
Terms of Use
Copyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved.
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