Comparison of Radio-Frequency Power Architectures for Plasma Generation
Name
PID6632743.pdf
Size
243.71 KB
Format
Adobe PDF
Checksum (MD5)
174c73899a44b76d8f9d0c753847b5f8
Author(s)
Al Bastami, Anas Ibrahim
Zhang, Haoquan
Jurkov, Alexander
Radomski, Aaron
Perreault, David J
Date Issued
November 2020
Journal
2020 IEEE 21st Workshop on Control and Modeling for Power Electronics
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Al Bastami, Anas et al. "Comparison of Radio-Frequency Power Architectures for Plasma Generation." 2020 IEEE 21st Workshop on Control and Modeling for Power Electronics, November 2020, Aalborg, Denmark, Institute of Electrical and Electronics Engineers, November 2020. © 2020 IEEE
Version
Author's final manuscript
Abstract
Applications such as plasma generation require the generation and delivery of radio-frequency (rf) power into widely-varying loads while simultaneously demanding high accuracy and speed in controlling the output power across a wide range of power levels. Attaining high efficiency and performance across all operating conditions while meeting these system requirements is challenging, especially at high frequencies (10s of MHz) and power levels (1000s of Watts and above). This paper evaluates different architectures that directly address these challenges and enable efficient high-frequency operation over a wide range of output power levels and load impedances with the capability of fast output power control (e.g., within a few microseconds). We review techniques for achieving fast output power control and evaluate their suitability in efficient rf systems demanding accurate and fast control of output power. Two dc-to-rf system architectures utilizing the discussed power control techniques are presented to illustrate both the achievable performance benefits as well as their robustness to load impedance variation, and are compared using time-domain simulations. The results indicate the ability of the proposed architectures to maintain high efficiency (> 90%) across a very wide range of output power levels (e.g., over a factor of up to 85x) while being robust to load impedance variations.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
Creative Commons Attribution-Noncommercial-Share Alike
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1109/compel49091.2020.9265700
