MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality
Name
1811.03528.pdf
Description
Accepted version
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7.25 MB
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Checksum (MD5)
30c0abe61d16a0e6b0460847eda6f26e
Author(s)
Lemettinen, Jori
Okumura, Hironori
Palacios, Tomas
Date Issued
April 2018
Journal
Journal of Crystal Growth
Publisher
Elsevier BV
Citation
Lemettinen, J., H. Okumura, I. Kim, C. Kauppinen, T. Palacios and S. Suihkonen. "MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality." Journal of Crystal Growth 487, no. 1 (April 2018): pages 12-16.
Version
Author's final manuscript
Abstract
We present the effect of miscut angle of SiC substrates on N-polar AlN growth. The N-polar AlN layers were grown on C-face 4H-SiC substrates with a miscut towards 〈1¯100〉 by metal-organic vapor phase epitaxy (MOVPE). The optimal V/III ratios for high-quality AlN growth on 1° and 4° miscut substrates were found to be 20,000 and 1000, respectively. MOVPE grown N-polar AlN layer without hexagonal hillocks or step bunching was achieved using a 4H-SiC substrate with an intentional miscut of 1° towards 〈1¯100〉. The 200-nm-thick AlN layer exhibited X-ray rocking curve full width half maximums of 203 arcsec and 389 arcsec for (0 0 2) and (1 0 2) reflections, respectively. The root mean square roughness was 0.4 nm for a 2 μm×2μm atomic force microscope scan.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Microsystems Technology Laboratories
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Creative Commons Attribution-NonCommercial-NoDerivs License
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DOI of Published Version
https://doi.org/10.1016/J.JCRYSGRO.2018.02.013
