A 20 dBm 5-14 GHz power amplifier with integrated planar transformers in SiGe
Name
244250021-MIT.pdf
Description
Full printable version
Size
4.6 MB
Format
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Checksum (MD5)
108cec969f9a50eeb077b34b68ac92c6
Author(s)
Mui, Andrew K
Advisor(s)
Joel L. Dawson and Timothy M. Hancock.
Date Issued
2008
Publisher
Massachusetts Institute of Technology
Abstract
The integration of radar systems has taken a long journey into the modern world. Advances in signal processing technology and integrated circuit technology have lead the way for smaller, more integrated radar systems. Specific to the hardware side of a radar, the RF generation and detection once done in one location in the radar is now being replaced by small sub-elements which combine RF generation and detection at the element level. This work describes a power amplifier that can be used at the element level. The design methodology for a single stage amplifier in a Silicon Germanium Bipolar process covering 5-14 GHz is discussed. Simulation results and measurement results closely match and show peak power outputs of 25 dBm and peak power-added efficiencies (PAE) of approximately 32 %.
Description
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2008.
Includes bibliographical references (leaves 73-74).
Subjects
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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