Continuous-wave electrically pumped 1.55-mu m edge-emitting platelet ridge laser diodes on silicon
Name
Rumpler-2009-Continuous-Wave Electrically Pumped 1.55-mu m Edge-Emitting Platelet Ridge Laser Diodes on Silicon.pdf
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Author(s)
Rumpler, Joseph J.
Fonstad, Clifton G., Jr.
Date Issued
June 2009
Journal
IEEE Photonics Technology Letters
Publisher
Institute of Electrical and Electronics Engineers
Citation
Rumpler, J.J., and C.G. Fonstad. “Continuous-Wave Electrically Pumped 1.55- \mu m Edge-Emitting Platelet Ridge Laser Diodes on Silicon.” Photonics Technology Letters, IEEE 21.13 (2009): 827-829. © Copyright 2010 IEEE
Version
Final published version
Abstract
We report the successful integration on silicon of small footprint, low-threshold electrically pumped edge-emitting lasers by a new approach incorporating microcleaving technology to produce 6-mum-thick platelet lasers with cleaved facets, microscale pick and place assembly to position them on the substrate, and diaphragm pressure solder bonding to attach/connect them permanently in place. InP-based ridge-waveguide platelet lasers integrated on silicon lase at 1550-nm continuous-wave to 55degC (pulsed to 80degC) with output powers as high as 26.8 mW, external differential quantum efficiencies as high as 81%, and threshold currents as low as 18 mA.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1109/LPT.2009.2019261
