Magnetic remanent states and quasistatic switching behavior of Fe split-rings for spin field-effect-transistor applications
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Ross_Magnetic remanent.pdf
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Author(s)
Lee, J. H.
Holmes, S. N.
Hong, B.
Roy, P. E.
Mascaro, Mark D.
Hayward, T. J.
Anderson, D.
Cooper, K.
Jones, G. A. C.
Vickers, M. E.
Date Issued
October 2009
Journal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Lee, J. H., S. N. Holmes, B. Hong, P. E. Roy, M. D. Mascaro, T. J. Hayward, D. Anderson, et al. “Magnetic remanent states and quasistatic switching behavior of Fe split-rings for spin field-effect-transistor applications.” Applied Physics Letters 95, no. 17 (2009): 172505. © 2009 American Institute of Physics
Version
Final published version
Abstract
The magnetic remanent states and switching behavior of Fe thin-film split-rings are investigated using magnetic force microscopy, magnetoresistance measurements, and micromagnetic simulations in order to assess their suitability as spin-filter contacts for spin field-effect-transistors. The gaps between the two halves of each ring are found to absorb then emit domain walls and act as pinning sites for “virtual” domain walls so that the observed switching mechanisms are similar to those of continuous rings. It is shown that these rings offer advantages over rectangular spin-filter contacts owing to their reduced stray fields and easy accessibility of the necessary magnetic states.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1063/1.3257360
