Vertically integrated transistors for field emission applications
Name
46805778-MIT.pdf
Description
Full printable version
Size
10.92 MB
Format
Adobe PDF
Checksum (MD5)
0d12032b1791b09b5f875f528ff419c1
Author(s)
Herz, Paul Richard, 1972-
Advisor(s)
Akintunde I. Akinwande.
Date Issued
2000
Publisher
Massachusetts Institute of Technology
Abstract
Field emission devices have demonstrated several research and commercial applications in the areas of flat panel displays, microwave power devices, imaging sensors and electron sources. Recent work has shown the feasibility of using integrated MOSFETs to control and enhance field emission stability and operating characteristics. This research effort investigates the integration of vertical MOS transistors with field emitter arrays as a means to enhance field emission device capabilities and range of applications. Vertical MOSFET device modeling was performed using MEDICI, a commercially available electrostatic simulator. In addition, process modeling was conducted using SUPREM to optimize design and layout sequencing for device fabrication. Working devices were fabricated and tested in the Integrated Circuits Laboratory within the Microsystems and Technology Laboratory at MIT. Techniques to achieve high-density field emitter arrays necessary for integrated VMOS / FEA devices were also investigated. This study determined that it is feasible to integrate and control field emitter arrays with vertical MOSFET devices.
Description
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2000.
Includes bibliographical references (p. 101-105).
Subjects
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
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