Toward a Germanium Laser for Integrated Silicon Photonics
Name
Sun-2010-Toward a Germanium Laser for Integrated Silicon Photonics.pdf
Size
2.34 MB
Format
Adobe PDF
Checksum (MD5)
4da7700038a166fa7aa5a65c89871dec
Author(s)
Sun, Xiaochen
Liu, Jifeng
Kimerling, Lionel C.
Michel, Jurgen
Date Issued
February 2010
Journal
IEEE Journal of Selected Topics in Quantum Electronics
Publisher
Institute of Electrical and Electronics Engineers
Citation
Kimerling, L.C., and J. Michel, with Xiaochen Sun and Jifeng Liu. “Toward a Germanium Laser for Integrated Silicon Photonics.” Selected Topics in Quantum Electronics, IEEE Journal Of 16.1 (2010) : 124-131. © 2010 IEEE.
Version
Final published version
Abstract
It has been demonstrated theoretically and experimentally that germanium, with proper strain engineering and n-type doping, can be an efficient light emitter and a gain medium at its direct bandgap within the third optical communication window ( ~1520-1620 nm). In this paper, we systematically discuss the effect of strain, doping, and temperature on the direct-gap optical gain in germanium. For electrically pumped devices, properties and design guidelines of Ge/Si heterojunction are also analyzed and compared with the results from fabricated Ge/Si heterojunction LEDs.
MIT Department
MIT Materials Research Laboratory
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Microphotonics Center
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1109/jstqe.2009.2027445
