Correlated Double-Electron Additions at the Edge of a Two-Dimensional Electronic System
Name
PhysRevLett.126.256802.pdf
Description
Published version
Size
939.88 KB
Format
Adobe PDF
Checksum (MD5)
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Author(s)
Demir, Ahmet
Staley, Neal
Aronson, Samuel
Tomarken, Spencer
West, Ken
Baldwin, Kirk
Pfeiffer, Loren
Ashoori, Raymond
Date Issued
2021
Journal
Physical Review Letters
Publisher
American Physical Society (APS)
Citation
Demir, Ahmet, Staley, Neal, Aronson, Samuel, Tomarken, Spencer, West, Ken et al. 2021. "Correlated Double-Electron Additions at the Edge of a Two-Dimensional Electronic System." Physical Review Letters, 126 (25).
Version
Final published version
Abstract
We create laterally large and low-disorder GaAs quantum-well-based quantum dots that act as small two-dimensional electron systems. We monitor tunneling of single electrons to the dots by means of capacitance measurements and identify single-electron capacitance peaks in the addition spectrum from occupancies of one up to thousands of electrons. The data show two remarkable phenomena in the Landau level filling factor range ν=2 to ν=5 in selective probing of the edge states of the dot: (i) Coulomb blockade peaks arise from the entrance of two electrons rather than one; (ii) at and near ν=5/2 and at fixed gate voltage, these double-height peaks appear uniformly in a magnetic field with a flux periodicity of h/2e, but they group into pairs at other filling factors.
MIT Department
Massachusetts Institute of Technology. Department of Physics
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DOI of Published Version
https://doi.org/10.1103/PHYSREVLETT.126.256802
