High-Performance WSe 2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits
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Palacios_High-performance.pdf
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Author(s)
Santos, Elton J. G.
Yu, Lili
Zubair, Ahmad
Zhang, Xu
Lin, Yuxuan
Zhang, Yuhao
Palacios, Tomas
Date Issued
July 2015
Journal
Nano Letters
Publisher
American Chemical Society (ACS)
Citation
Yu, Lili; Zubair, Ahmad; Santos, Elton J. G.; Zhang, Xu; Lin, Yuxuan; Zhang, Yuhao and Palacios, Tomás. “ High-Performance WSe 2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits .” Nano Letters 15, no. 8 (August 2015): 4928–4934. © 2015 American Chemical Society
Version
Author's final manuscript
Abstract
Because of their extraordinary structural and electrical properties, two-dimensional materials are currently being pursued for applications such as thin-film transistors and integrated circuit. One of the main challenges that still needs to be overcome for these applications is the fabrication of air-stable transistors with industry-compatible complementary metal oxide semiconductor (CMOS) technology. In this work, we experimentally demonstrate a novel high performance air-stable WSe₂ CMOS technology with almost ideal voltage transfer characteristic, full logic swing and high noise margin with different supply voltages. More importantly, the inverter shows large voltage gain (∼38) and small static power (picowatts), paving the way for low power electronic system in 2D materials.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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DOI of Published Version
https://doi.org/10.1021/acs.nanolett.5b00668
