RF Power Degradation of GaN High Electron Mobility Transistors
Author(s)
Joh, Jungwoo
del Alamo, Jesus A.
Date Issued
January 2011
Journal
IEEE International Electron Devices Meeting (IEDM), 2010
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Joh, Jungwoo, and Jesus A. del Alamo. “RF power degradation of GaN High Electron Mobility Transistors.” IEEE, 2010. 20.2.1-20.2.4. © Copyright 2010 IEEE
Version
Final published version
Abstract
We have developed a versatile methodology to systematically investigate the RF reliability of GaN High-Electron Mobility Transistors. Our technique utilizes RF and DC figures of merit to diagnose the degradation of RF stressed devices in real time. We have found that there is good correlation between selected RF and DC figures of merit. However, compared with DC stress, RF stress at the same bias point is found to be more severe and to introduce new degradation modes. At high power level, RF stress induces a prominent trapping-related increase in the source resistance most likely as a result of the creation of new traps. This is in contrast with drain degradation that often occurs under similar DC conditions. Our findings cast a doubt over the ability of DC life test in evaluating reliability under RF power conditions.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Microsystems Technology Laboratories
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1109/IEDM.2010.5703397
