Ge-on-Si laser operating at room temperature
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Kimerling_Ge-on-si laser.pdf
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Author(s)
Liu, Jifeng
Sun, Xiaochen
Kimerling, Lionel C.
Michel, Jurgen
Camacho-Aguilera, Rodolfo Ernesto
Date Issued
February 2010
Journal
Optics Letters
Publisher
Optical Society of America
Citation
Liu, Jifeng, Xiaochen Sun, Rodolfo Camacho-Aguilera, Lionel C. Kimerling, and Jurgen Michel. “Ge-on-Si laser operating at room temperature.” Optics Letters 35, no. 5 (February 24, 2010): 679. © 2010 Optical Society of America
Version
Final published version
Abstract
Monolithic lasers on Si are ideal for high-volume and large-scale electronic–photonic integration. Ge is an interesting candidate owing to its pseudodirect gap properties and compatibility with Si complementary metal oxide semiconductor technology. Recently we have demonstrated room-temperature photoluminescence, electroluminescence, and optical gain from the direct gap transition of band-engineered Ge-on-Si using tensile strain and n-type doping. Here we report what we believe to be the first experimental observation of lasing from the direct gap transition of Ge-on-Si at room temperature using an edge-emitting waveguide device. The emission exhibited a gain spectrum of 1590–1610 nm, line narrowing and polarization evolution from a mixed TE/TM to predominantly TE with increasing gain, and a clear threshold behavior.
MIT Department
MIT Materials Research Laboratory
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Microphotonics Center
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1364/OL.35.000679
