Amber-green light-emitting diodes using order-disorder Al[subscript x]In[subscript 1−x]P heterostructures
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Fitzgerald_Amber-green.pdf
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Author(s)
Christian, Theresa M.
Beaton, Daniel A.
Mukherjee, Kunal
Alberi, Kirstin
Fitzgerald, Eugene A.
Mascarenhas, Angelo
Date Issued
August 2013
Journal
Journal of Applied Physics
Publisher
American Institute of Physics (AIP)
Citation
Christian, Theresa M., Daniel A. Beaton, Kunal Mukherjee, Kirstin Alberi, Eugene A. Fitzgerald, and Angelo Mascarenhas. “Amber-Green Light-Emitting Diodes Using Order-Disorder AlxIn1−xP Heterostructures.” Journal of Applied Physics 114, no. 7 (2013): 074505. © 2013 AIP Publishing LLC
Version
Final published version
Abstract
We demonstrate amber-green emission from Al[subscript x]In[subscript 1– x]P light-emitting diodes (LEDs) with luminescence peaked at 566 nm and 600 nm. The LEDs are metamorphically grown on GaAs substrates via a graded In[subscript y]Ga[subscript 1– y]As buffer layer and feature electron confinement based on the control of Al[subscript x]In[subscript 1– x]P CuPt atomic ordering. A control sample fabricated without order-disorder carrier confinement is used to illustrate device improvement up to a factor of 3 in light output due to confinement at drive currents of 40 A/cm[superscript 2]. The light output at room temperature from our Al[subscript x]In[subscript 1– x]P LED structure emitting at 600 nm is 39% as bright as a Ga[subscript x]In[subscript 1– x]P LED emitting at 650 nm.
MIT Department
MIT Materials Research Laboratory
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1063/1.4818477
