Channel engineering of SOI MOSFETs for RF applications
Name
Chen-2009-Channel engineering of SOI MOSFETs for RF applications.pdf
Size
808.31 KB
Format
Adobe PDF
Checksum (MD5)
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Author(s)
Keast, Craig L.
Wyatt, Peter W.
Healey, Paul D.
Yost, Donna-Ruth W.
Gouker, Pascale M.
Chen, Chenson K.
Kedzierski, Jakub T.
Knecht, Jeffrey M.
Chen, Chang-Lee
Date Issued
October 2009
Journal
2009 IEEE International SOI Conference
Publisher
Institute of Electrical and Electronics Engineers
Citation
Chen, C.L. et al. “Channel engineering of SOI MOSFETs for RF applications.” SOI Conference, 2009 IEEE International. 2009. 1-2. © 2009 IEEE
Version
Final published version
Abstract
Channel engineering of SOI MOSFETs is explored by altering ion implantation without adding any new fabrication steps to the standard CMOS process. The effects of implantation on characteristics important for RF applications, such as transconductance, output resistance, breakdown voltage, are compared. Data show that the best overall RF MOSFET has no body and drain-extension implants.
MIT Department
Lincoln Laboratory
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
http://dx.doi.org/10.1109/SOI.2009.5318756
