Hybrid CMOS/GaN 40-MHz Maximum 20-V Input DC–DC Multiphase Buck Converter
Name
Hybrid-CMOS-GaN-40-MHz-Maximum-20-V-Input.pdf
Description
Accepted version
Size
4.4 MB
Format
Adobe PDF
Checksum (MD5)
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Author(s)
Piedra, Daniel
Palacios, Tomas
Shepard, Kenneth L.
Date Issued
June 2017
Journal
IEEE Journal of Solid-State Circuits
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Aklimi, Eyal, Daniel Piedra, Kevin Tien, Tomás Palacios and Kenneth L. Shepard. "Hybrid CMOS/GaN 40-MHz Maximum 20-V Input DC–DC Multiphase Buck Converter." IEEE Journal of Solid-State Circuits 52, issue 6 (June 2017): pp. 1618-1627.
Version
Author's final manuscript
Abstract
This paper presents a 40-MHz hybrid CMOS/GaN integrated multiphase DC-DC switched-inductor buck converter with a maximum 20-V input voltage. The half-bridge switches are realized using lateral AlGaN/GaN HEMTs, while the drivers and other circuitry are implemented in standard 180-nm CMOS. The interface between the CMOS and GaN dice is achieved through face-to-face bonding, reducing inductive parasitics for the connection to less than 15 pH. A capacitively coupled level shifter provides the gate drive for the high-side GaN switch using 5-V CMOS devices. The converter demonstrates 76% efficiency for 8:1 V conversion and over 60% efficiency for conversion ratios up to 16:1.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
Creative Commons Attribution-Noncommercial-Share Alike
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DOI of Published Version
https://doi.org/10.1109/JSSC.2017.2672986
