Impact of defect type on hydrogen passivation effectiveness in multicrystalline silicon solar cells
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Buonassisi_Impact of defect.pdf
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595.01 KB
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Checksum (MD5)
ac6515c5b164a9ec5a4d9cb903e70329
Author(s)
Bertoni, Mariana I.
Hudelson, S.
Newman, Bonna Kay
Bernardis, S.
Fenning, David P.
Dekkers, H. F. W.
Cornagliotti, E.
Zuschlag, A.
Micard, G.
Hahn, G.
Date Issued
June 2010
Journal
Proceedings of the 2010 35th IEEE Photovoltaic Specialists Conference (PVSC)
Publisher
Institute of Electrical and Electronics Engineers
Citation
Bertoni, M.I. et al. “Impact of Defect Type on Hydrogen Passivation Effectiveness in Multicrystalline Silicon Solar Cells.” 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), 20-25 June 2010, Hawaiian Convention Center, Honolulu, HI, USA, IEEE, 2010. 000345–000346. CrossRef. Web. ©2010 IEEE.
Version
Final published version
Abstract
In this work we examine the effectiveness of hydrogen passivation at grain boundaries as a function of defect type and microstructure in multicrystalline silicon. We analyze a specially prepared solar cell with alternating mm-wide bare and SiNx-coated stripes using laser beam-induced current (LBIC), electron backscatter diffraction (EBSD), synchrotron-based X-ray fluorescence microscopy (μ-XRF), and defect etching to correlate pre- and post-hydrogenation recombination activity with grain boundary character, density of iron-silicide nanoprecipitates, and dislocations. This study reveals that the microstructure of boundaries that passivate well and those that do not differ mostly in the character of the dislocations along the grain boundary, while iron silicide precipitates along the grain boundaries (above detection limits) were found to play a less significant role.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1109/PVSC.2010.5616904
