Assembly of Sub-10-nm Block Copolymer Patterns with Mixed Morphology and Period Using Electron Irradiation and Solvent Annealing
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Author(s)
Son, Jeong Gon
Chang, Jae-Byum
Berggren, Karl K.
Ross, Caroline A.
Date Issued
October 2011
Journal
Nano Letters
Publisher
American Chemical Society (ACS)
Citation
Son, Jeong Gon, Jae-Byum Chang, Karl K. Berggren, and Caroline A. Ross. Assembly of Sub-10-nm Block Copolymer Patterns with Mixed Morphology and Period Using Electron Irradiation and Solvent Annealing. Nano Letters 11, no. 11 (November 9, 2011): 5079-5084.
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Author's final manuscript
Abstract
Block copolymer self-assembly generates patterns with periodicity in the ∼10–100 nm range and is increasingly recognized as a route to lithographic patterning beyond the resolution of photolithography. Block copolymers naturally produce periodic patterns with a morphology and length-scale determined by the molecular architecture, and considerable research has been carried out to extend the range of patterns that can be produced from a given block copolymer, but the ability to control the period of the pattern over a wide range and to achieve complex structures with mixed morphologies from a given block copolymer is limited. Here we show how patterns consisting of coexisting sub-10-nm spheres and cylinders and sphere patterns with a range of periods can be created using a combination of serial solvent anneal processes and electron-beam irradiation of selected areas of a film of poly(styrene-block-dimethylsiloxane). These techniques extend the capabilities of block copolymer lithography, enabling complex aperiodic nanoscale patterns to be formed from a single block copolymer thin film.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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DOI of Published Version
https://doi.org/10.1021/nl203445h
