Efficient, compact and low loss thermo-optic phase shifter in silicon
Name
1410.3616.pdf
Description
Accepted version
Size
2.86 MB
Format
Adobe PDF
Checksum (MD5)
6085f13b68d84c5d4b4d24d6b0f5189e
Author(s)
Harris, Nicholas C
Ma, Yangjin
Mower, Jacob
Baehr-Jones, Tom
Englund, Dirk
Hochberg, Michael
Galland, Christophe
Date Issued
2014
Journal
Optics Express
Publisher
The Optical Society
Citation
Harris, N. C., et al. "Efficient, Compact and Low Loss Thermo-Optic Phase Shifter in Silicon." Optics Express 22 9 (2014): 10487-93.
Version
Author's final manuscript
Abstract
We design a resistive heater optimized for efficient and low-loss optical phase modulation in a silicon-on-insulator (SOI) waveguide and characterize the fabricated devices. Modulation is achieved by flowing current perpendicular to a new ridge waveguide geometry. The resistance profile is engineered using different dopant concentrations to obtain localized heat generation and maximize the overlap between the optical mode and the high temperature regions of the structure, while simultaneously minimizing optical loss due to free-carrier absorption. A 61.6 mm long phase shifter was fabricated in a CMOS process with oxide cladding and two metal layers. The device features a phase-shifting efficiency of 24.77 ± 0.43 mW=p and a -3 dB modulation bandwidth of 130.0 ± 5.59 kHz; the insertion loss measured for 21 devices across an 8-inch wafer was only 0.23 ± 0.13 dB. Considering the prospect of densely integrated photonic circuits, we also quantify the separation necessary to isolate thermo-optic devices in the standard 220 nm SOI platform. © 2014 Optical Society of America.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
Creative Commons Attribution-Noncommercial-Share Alike
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1364/OE.22.010487
