Enhanced Hole Transport in Short-Channel Strained-SiGe p-MOSFETs
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Gomez_Enhanced-Hole-Transport.pdf
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1.25 MB
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Checksum (MD5)
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Author(s)
Gomez, Leonardo
Hashemi, Pouya
Hoyt, Judy L.
Date Issued
October 2009
Journal
IEEE Transactions on Electron Devices
Publisher
Institute of Electrical and Electronics Engineers
Citation
Gomez, L., P. Hashemi, and J.L. Hoyt. “Enhanced Hole Transport in Short-Channel Strained-SiGe p-MOSFETs.” Electron Devices, IEEE Transactions on 56.11 (2009): 2644-2651. © 2009 Institute of Electrical and Electronics Engineers
Version
Final published version
Abstract
Hole mobility and velocity are extracted from scaled strained-Si[subscript 0.4]5Ge[subscript 0.55]channel p-MOSFETs on insulator. Devices have been fabricated with sub-100-nm gate lengths, demonstrating hole mobility and velocity enhancements in strained- Si[subscript 0.4]5Ge[subscript 0.55]channel devices relative to Si. The effective hole mobility is extracted utilizing the dR/dL method. A hole mobility enhancement is observed relative to Si hole universal mobility for short-channel devices with gate lengths ranging from 65 to 150 nm. Hole velocities extracted using several different methods are compared. The hole velocity of strained-SiGe p-MOSFETs is enhanced over comparable Si control devices. The hole velocity enhancements extracted are on the order of 30%. Ballistic velocity simulations suggest that the addition of (110) uniaxial compressive strain to Si[subscript 0.4]5Ge[subscript 0.55] can result in a more substantial increase in velocity relative to relaxed Si.
Subjects
uniaxial stress
silicon germanium
p-MOSFET
hole velocity
hole mobility
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
http://dx.doi.org/10.1109/ted.2009.2031043
