Solid-state qubits integrated with superconducting through-silicon vias
Name
s41534-020-00289-8.pdf
Description
Published version
Size
1.25 MB
Format
Adobe PDF
Checksum (MD5)
c8d2d7c5c80a01fc2a5c25244ff8af8a
Author(s)
Yost, DRW
Schwartz, ME
Mallek, J
Rosenberg, D
Stull, C
Yoder, JL
Calusine, G
Cook, M
Das, R
Day, AL
Date Issued
2020
Journal
npj Quantum Information
Publisher
Springer Science and Business Media LLC
Version
Final published version
Abstract
© 2020, The Author(s). As superconducting qubit circuits become more complex, addressing a large array of qubits becomes a challenging engineering problem. Dense arrays of qubits benefit from, and may require, access via the third dimension to alleviate interconnect crowding. Through-silicon vias (TSVs) represent a promising approach to three-dimensional (3D) integration in superconducting qubit arrays—provided they are compact enough to support densely-packed qubit systems without compromising qubit performance or low-loss signal and control routing. In this work, we demonstrate the integration of superconducting, high-aspect ratio TSVs—10 μm wide by 20 μm long by 200 μm deep—with superconducting qubits. We utilize TSVs for baseband control and high-fidelity microwave readout of qubits using a two-chip, bump-bonded architecture. We also validate the fabrication of qubits directly upon the surface of a TSV-integrated chip. These key 3D-integration milestones pave the way for the control and readout of high-density superconducting qubit arrays using superconducting TSVs.
MIT Department
Lincoln Laboratory
Massachusetts Institute of Technology. Research Laboratory of Electronics
Terms of Use
Creative Commons Attribution 4.0 International license
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1038/S41534-020-00289-8
