Photovoltaic effect by vapor-printed polyselenophene
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Gleason_Photovoltaic Effect by Vapor-Printed Polyselenophene.pdf
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Author(s)
Jo, Won Jun
Borrelli, David C
Bulovic, Vladimir
Gleason, Karen K
Date Issued
July 2015
Journal
Organic Electronics
Publisher
Elsevier
Citation
Jo, Won Jun et al. “Photovoltaic Effect by Vapor-Printed Polyselenophene.” Organic Electronics 26 (November 2015): 55–60 © 2015 Elsevier B.V.
Version
Author's final manuscript
Abstract
Polyselenophene (PSe) donor layers are successfully integrated into organic photovoltaic devices (OPV) for the first time. Thin, patterned films of this insoluble semiconductor were fabricated using a vacuum-based vapor-printing technique, oxidative chemical vapor deposition (oCVD) combined with in-situ shadow masking. The vapor-printed PSe exhibits a reduced optical bandgap of 1.76 eV and enhanced photo-responsivity in the red compared to its sulfur containing analog, polythiophene. These relative advantages are most likely explained by selenium’s enhanced electron-donating character compared to sulfur. The HOMO level of PSe was determined to be at −4.85 eV. The maximum power conversion efficiency achieved was 0.4% using a bilayer heterojunction device architecture with C₆₀ as the donor.
MIT Department
Massachusetts Institute of Technology. Department of Chemical Engineering
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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Creative Commons Attribution-NonCommercial-NoDerivs License
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DOI of Published Version
https://doi.org/10.1016/j.orgel.2015.07.017
