A 77GHz power amplifier in silicon germanium BiCMOS technology
Name
153949592-MIT.pdf
Description
Full printable version
Size
2.01 MB
Format
Adobe PDF
Checksum (MD5)
c8697aa8b87676707ed6195d73641255
Author(s)
Nguyen, Khoa Minh
Advisor(s)
Charles G. Sodini.
Alternative Title
Seventy-seven gigahertz power amplifier in silicon germanium bipolar complementary metal oxide semiconductor technology
Date Issued
2006
Publisher
Massachusetts Institute of Technology
Abstract
The allocation of millimeter-wave frequencies has opened new possibilities for imaging applications such as vehicular radar and concealed weapons detection. Recent advances in silicon processes offer a new means of implementing cost-effective millimeter-wave integrated circuits, a field previously dominated by III-V semiconductors. By moving towards silicon, millimeter-wave circuits can achieve new levels of integration that were not possible when designed with III-V semiconductors. This thesis discusses the challenges and design of a 2-stage cascoded class-AB 77GHz power amplifier that could be used for imaging applications. Simulation results show a maximum output power of 20dBm, 26dB gain, and a maximum power-added efficiency (PAE) of 16%.
Description
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2006.
Includes bibliographical references (leaves 53-54).
Subjects
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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