Pushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edge
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Pushing the limits.pdf
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Author(s)
Ooi, K. J. A.
Ng, D. K. T.
Wang, T.
Chee, A. K. L.
Ng, S. K.
Wang, Q.
Ang, L. K.
Tan, D. T. H.
Agarwal, Anuradha
Kimerling, Lionel C
Date Issued
January 2017
Journal
Nature Communications
Publisher
Nature Publishing Group
Citation
Ooi, K. J. A., D. K. T. Ng, T. Wang, A. K. L. Chee, S. K. Ng, Q. Wang, L. K. Ang, A. M. Agarwal, L. C. Kimerling, and D. T. H. Tan. “Pushing the Limits of CMOS Optical Parametric Amplifiers with USRN:Si7N3 Above the Two-Photon Absorption Edge.” Nature Communications 8 (January 4, 2017): 13878.
Version
Final published version
Abstract
CMOS platforms operating at the telecommunications wavelength either reside within the highly dissipative two-photon regime in silicon-based optical devices, or possess small nonlinearities. Bandgap engineering of non-stoichiometric silicon nitride using state-of-the-art fabrication techniques has led to our development of USRN (ultra-silicon-rich nitride) in the form of Si[subscript 7]N[subscript 3], that possesses a high Kerr nonlinearity (2.8 × 10[superscript −13] cm[superscript 2] W[superscript −1]), an order of magnitude larger than that in stoichiometric silicon nitride. Here we experimentally demonstrate high-gain optical parametric amplification using USRN, which is compositionally tailored such that the 1,550 nm wavelength resides above the two-photon absorption edge, while still possessing large nonlinearities. Optical parametric gain of 42.5 dB, as well as cascaded four-wave mixing with gain down to the third idler is observed and attributed to the high photon efficiency achieved through operating above the two-photon absorption edge, representing one of the largest optical parametric gains to date on a CMOS platform.
MIT Department
Massachusetts Institute of Technology. Materials Processing Center
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Microphotonics Center
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Creative Commons Attribution 4.0 International License
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DOI of Published Version
https://doi.org/10.1038/ncomms13878
