An oscilloscope array for high-impedance device characterization
Name
Chen-2009-An oscilloscope array for high-impedance device characterization.pdf
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1.71 MB
Format
Adobe PDF
Checksum (MD5)
3225ab79892ec23ef2e55ddf181ed76f
Author(s)
Stojanovic, Vladimir Marko
Chen, Fred Fu-Chin
Chandrakasan, Anantha P.
Date Issued
November 2009
Journal
Proceedings of ESSCIRC, 2009
Publisher
Institute of Electrical and Electronics Engineers
Citation
Chen, F., A. Chandrakasan, and V. Stojanovic. “An oscilloscope array for high-impedance device characterization.” ESSCIRC, 2009. ESSCIRC '09. Proceedings of. 2009. 112-115. © 2009 IEEE
Version
Final published version
Abstract
An equivalent time oscilloscope array is implemented in a 90 nm CMOS technology. A combination of adjustable termination, calibration circuitry and capacitance compensation enables driver bandwidths between 0.4 to 2 GHz for termination impedances of 20 Omega to 2 kOmega for extraction of S-parameters and delay characteristics of high impedance devices such as carbon nanotubes (CNTs) and graphene. Measurement results show that the capacitance compensation technique enhances the bandwidth by 3X for impedances between 2 kOmega and 20 kOmega.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Microsystems Technology Laboratories
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1109/ESSCIRC.2009.5325935
