High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications
Name
RLE_PR_135_01_01s_02.pdf
Size
472.54 KB
Format
Adobe PDF
Checksum (MD5)
c8ae2724652104a6fafdcc4f9d8065ee
Author(s)
del Alamo, Jesús A.
Awanol, Yuji
Bahl, Sandeep R.
Leary, Michael H.
Moolji, Akbar A.
Cudjoe-Flanders, Charmaine A.
Odoardi, Angela R.
Date Issued
1992-01-01 to 1992-12-31
Publisher
Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)
Series/Report no.
Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 135
Description
Contains an introduction, reports on two research projects and a list of publications.
Terms of Use
Copyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved.
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