Growth of erbium-doped Si/SiGe double heterostructures by ultra-high vacuum chemical vapor deposition
Name
37525748-MIT.pdf
Description
Full printable version
Size
8.39 MB
Format
Adobe PDF
Checksum (MD5)
36e15bef105a412137625e5f5a291459
Author(s)
Morse, Michael Ty
Advisor(s)
Lionel C. Kimerling.
Date Issued
1997
Publisher
Massachusetts Institute of Technology
Description
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1997.
Includes bibliographical references (leaves 111-116).
Subjects
Materials Science and Engineering
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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