Raman excitation profile of the G band in single-chirality carbon nanotubes
Name
PhysRevB.89.035402.pdf
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Author(s)
Moura, L. G.
Moutinho, M. V. O.
Venezuela, P.
Fantini, C.
Righi, A.
Pimenta, M. A.
Strano, Michael S.
Date Issued
January 2014
Journal
Physical Review B
Publisher
American Physical Society
Citation
Moura, L. G., M. V. O. Moutinho, P. Venezuela, C. Fantini, A. Righi, M. S. Strano, and M. A. Pimenta. “Raman Excitation Profile of the G Band in Single-Chirality Carbon Nanotubes.” Phys. Rev. B 89, no. 3 (January 2014). © 2014 American Physical Society
Version
Final published version
Abstract
We present in this work measurements of the Raman excitation profile of the high-energy phonons (G band) in single-chirality (n,m) semiconducting single-wall carbon nanotubes using more than 70 laser excitation energies, and a theoretical description based on the third-order quantum model for Raman scattering. We show that the observed asymmetry in the G band Raman excitation profile is rigorously explained by considering all physical elements associated with Raman scattering in (n,m) carbon nanotubes, such as the existence of van Hove singularities in the electronic density of states and wave-vector dependence of the matrix elements of the Raman process. We conclude that the proposed violation of the Condon approximation is not a fundamental principle underlying the nanotube photophysics.
MIT Department
Massachusetts Institute of Technology. Department of Chemical Engineering
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DOI of Published Version
https://doi.org/10.1103/PhysRevB.89.035402
