Gallium Nitride phononic crystal resonator
Name
927353020-MIT.pdf
Description
Full printable version
Size
4.4 MB
Format
Adobe PDF
Checksum (MD5)
56fe953740384cfcc2bb487dd0833b34
Author(s)
Wang, Siping, S.M. Massachusetts Institute of Technology
Advisor(s)
Dana Weinstein
Alternative Title
GaN phononic crystal resonator
Date Issued
2015
Publisher
Massachusetts Institute of Technology
Abstract
We present a Gallium Nitride (GaN) Lamb Wave resonator using a Phononic Crystal (PnC) to selectively confine elastic vibrations with wide-band spurious mode suppression. A unique feature of the design demonstrated here is a folded PnC structure to relax energy confinement in the non-resonant dimension and to enable routing access of piezoelectric transducers inside the resonant cavity. This provides a clean spectrum over a wide frequency range and improves series resistance relative to transmission line or tethered resonators by allowing a low-impedance path for drive and sense electrodes. GaN resonators are demonstrated with wide-band suppression of spurious modes, f -Q product up to 3.06 x 1012, and resonator coupling coefficient k2.eff up to 0.23%. (filter BW up to 0.46%). Furthermore, these PnC GaN resonators exhibit record-breaking power handling, with IIP3 of +27.2dBm demonstrated at 993MHz.
Description
Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2015.
Cataloged from PDF version of thesis.
Includes bibliographical references (pages 41-42).
Subjects
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
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