High phosphorous doped germanium: Dopant diffusion and modeling
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Kimerling_High phosphorous.pdf
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Author(s)
Cai, Yan
Bessette, Jonathan T.
Kimerling, Lionel C.
Michel, Jurgen
Camacho-Aguilera, Rodolfo Ernesto
Date Issued
August 2012
Journal
Journal of Applied Physics
Publisher
American Institute of Physics (AIP)
Citation
Cai, Yan et al. “High Phosphorous Doped Germanium: Dopant Diffusion and Modeling.” Journal of Applied Physics 112.3 (2012): 034509. © 2012 American Institute of Physics
Version
Final published version
Abstract
The in situ n-type doping of Ge thin films epitaxial grown on Si substrates is limited to 1 × 10[superscript 19] cm[superscript −3] by the phosphorous out-diffusion during growth at 600 °C. By studying the phosphorous diffusion in Ge with different background doping, we find that the diffusion coefficient is extrinsic and is enhanced 100 times in Ge doped at 1 × 10[superscript 19] cm[superscript −3] compared to intrinsic diffusivity. To achieve higher phosphorous concentration, delta-doped layers are used as a dopant source for phosphorous in-diffusion. We show that the doping level is a result of the competition between in-diffusion and dopant loss. The high diffusivity at high n-type carrier concentration leads to a uniform distribution of phosphorous in Ge with the concentration above 3 × 10[superscript 19] cm[superscript −3].
MIT Department
MIT Materials Research Laboratory
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1063/1.4745020
