Control of a semiconductor dry etch process using variation and correlation analyses
Name
971137485-MIT.pdf
Description
Full printable version
Size
1.79 MB
Format
Adobe PDF
Checksum (MD5)
6078d8c10d1e3a282ca6fbb549bfb864
Author(s)
Nilgianskul, Tan
Advisor(s)
Duane S. Boning.
Date Issued
2016
Publisher
Massachusetts Institute of Technology
Abstract
Statistical process control (SPC) is one of the traditional quality control methods that, if correctly applied, can be effective to improve and maintain quality and yield in any manufacturing facility. The purpose of this project is to demonstrate how to effectively apply SPC to a dry etch process (in this case plasma ashing), at Analog Devices, Inc., a company that runs large-scale fabrication sites in the Boston area. This thesis focuses on spatial and run-to-run variation across multiple measurement sites on a wafer and validates the assumptions of normality and correlation between sites within a wafer in order to justify and confirm the value of employing SPC theories to the plasma ashing process. By plotting control charts on past data, outlier data points are detected using Analog's current monitoring system. Further, irregularities in the process that would not have been detected using traditional x-bar Shewhart charts are detected by monitoring non-uniformity. Finally, cost analysis suggests that implementing SPC would be a modest investment relative to the potential savings.
Description
Thesis: M. Eng. in Manufacturing, Massachusetts Institute of Technology, Department of Mechanical Engineering, 2016.
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged from student-submitted PDF version of thesis.
Includes bibliographical references (pages 67-69).
Subjects
Mechanical Engineering.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
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