Low-temperature germanium ultra-high vacuum chemical vapor deposition for back-end photonic integration
Name
McComber-2009-Low-temperature germanium ultra-high vacuum chemical vapor deposition for back-end photonic integration.pdf
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633.31 KB
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Author(s)
Kimerling, Lionel C.
McComber, Kevin A.
Lui, Jifeng
Michel, Jurgen
Date Issued
November 2009
Journal
6th IEEE International Conference on Group IV Photonics, 2009. GFP '09
Publisher
Institute of Electrical and Electronics Engineers
Citation
McComber, K.A. et al. “Low-temperature germanium ultra-high vacuum chemical vapor deposition for back-end photonic integration.” Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on. 2009. 137-139. ©2009 IEEE.
Version
Final published version
Abstract
Polycrystalline germanium (poly-Ge) grown on amorphous Si (a-Si) by ultra-high vacuum chemical vapor deposition (UHVCVD) over oxide barriers at low temperatures (Tles450degC) exhibits a larger grain size and lower defect density than the as-grown poly-Ge next to the oxide barriers. Poly-Ge as deposited at 450degC is p-type, but the introduction of PH[subscript 3] during Ge deposition gives n-type poly-Ge with n = 2.1times10[superscript 18] cm[superscript -3]. The possible defect reduction and range of doping make poly-Ge a strong candidate for application to CMOS-compatible back-end photonic devices.
MIT Department
MIT Materials Research Laboratory
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1109/GROUP4.2009.5338312
