Etching of Graphene Devices with a Helium Ion Beam
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Jarillo-Herrero_Etching of.pdf
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Author(s)
Lemme, Max C.
Bell, David C.
Williams, James R.
Stern, Lewis A.
Baugher, Britton W. H.
Jarillo-Herrero, Pablo
Marcus, Charles M.
Date Issued
September 2009
Journal
ACS Nano
Publisher
American Chemical Society (ACS)
Citation
Lemme, Max C. et al. “Etching of Graphene Devices with a Helium Ion Beam.” ACS Nano 3.9 (2009): 2674–2676.
Version
Author's final manuscript
Abstract
We report on the etching of graphene devices with a helium ion beam, including in situ electrical measurement during lithography. The etching process can be used to nanostructure and electrically isolate different regions in a graphene device, as demonstrated by etching a channel in a suspended graphene device with etched gaps down to about 10 nm. Graphene devices on silicon dioxide (SiO[subscript 2]) substrates etch with lower He ion doses and are found to have a residual conductivity after etching, which we attribute to contamination by hydrocarbons.
MIT Department
Massachusetts Institute of Technology. Department of Physics
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1021/nn900744z
