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  4. Suppressed Critical Current in Superconducting Nanowire Single-Photon Detectors With High Fill-Factors

Suppressed Critical Current in Superconducting Nanowire Single-Photon Detectors With High Fill-Factors

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Author(s)
Yang, Joel K. W.
•
Kerman, Andrew J.
•
Dauler, Eric A.
•
Cord, Bryan M.
•
Anant, Vikas
•
Molnar, Richard J.
•
Berggren, Karl K.
Date Issued
June 2009
Journal
IEEE Transactions on Applied Superconductivity
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Yang, J.K.W. et al. “Suppressed Critical Current in Superconducting Nanowire Single-Photon Detectors With High Fill-Factors.” IEEE Transactions on Applied Superconductivity 19.3 (2009): 318–322. © Copyright 2009 IEEE
Version
Final published version
Abstract
In this work we present a new fabrication process that enabled the fabrication of superconducting nanowire single photon detectors SNSPD with fill-factors as high as 88% with gaps between nanowires as small as 12 nm. This fabrication process combined high-resolution electron-beam lithography with photolithography. Although this work was motivated by the potential of increased detection efficiency with higher fill-factor devices, test results showed an unexpected systematic suppression in device critical currents with increasing fill-factor.
MIT Department
Lincoln Laboratory
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
http://hdl.handle.net/1721.1/73188
DOI of Published Version
https://doi.org/10.1109/tasc.2009.2017953
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