Finite- vs. infinite-source emitters in silicon photovoltaics: Effect on transition metal gettering
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Finite-vs.infinite-sourceemittersinsiliconphotovoltaicsEffect-IEEEPVSC2016_proceeding.pdf
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1017.28 KB
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Checksum (MD5)
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Author(s)
Vahanissi, Ville
Liu, Zhengjun
Huang, Haibing
Magana, Ernesto
Khelifati, Nabil
Husein, Sebastian
Lai, Barry
Bouhafs, Djoudi
Laine, Hannu
Morishige, Ashley Elizabeth
Date Issued
June 2016
Journal
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Laine, Hannu S., Ville Vahanissi, Zhengjun Liu, Haibing Huang, Ernesto Magana, Ashley E. Morishige, Nabil Khelifati, et al. “Finite- Vs. Infinite-Source Emitters in Silicon Photovoltaics: Effect on Transition Metal Gettering.” 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) (June 2016).
Version
Author's final manuscript
Abstract
Control of detrimental metal impurities is crucial to silicon solar cell performance. Traditional silicon solar cell emitters are diffused in an infinite-source regime and are known to cause strong point defect segregation towards the emitter and thus enhance bulk minority carrier diffusion length. With the advent of ion-implantation and chemical vapor deposition (CVD) glasses, finite-source diffused emitters are attracting interest. This contribution aims to increase their adoption by elucidating the dominant gettering mechanisms present in finite-source diffused emitters. Our findings indicate that infinite-source diffusion is critical for effective segregation gettering, but that high enough surface phosphorus concentration can activate segregation gettering via finite-source diffusion as well. In the case of ion-implanted emitters, the traditional segregation gettering may be considerably enhanced by impurity precipitation in the implanted layer.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
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DOI of Published Version
https://doi.org/10.1109/PVSC.2016.7749686
