Heavy-ion-induced digital single event transients in a 180 nm fully depleted SOI process
Name
Gadlage-2009-Heavy-Ion-Induced Digital Single Event Transients in a 180 nm Fully Depleted SOI Process.pdf
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893.46 KB
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Checksum (MD5)
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Author(s)
Gouker, Pascale M.
Gadlage, Matthew J.
Bhuva, Bharat L.
Narasimham, Balaji
Schrimpf, Ronald D.
Date Issued
December 2009
Journal
IEEE Transactions on Nuclear Science
Publisher
Institute of Electrical and Electronics Engineers
Citation
Gouker, Pascale M., Pascale Gouker, Bharat L. Bhuva, Balaji Narasimham, and Ronald D. Schrimpf (2009). Heavy-ion-induced digital single event transients in a 180 nm fully depleted SOI process. IEEE Transactions on Nuclear Science 56: 3483-3488. © 2009 IEEE
Version
Final published version
Abstract
Heavy-ion-induced single events transients (SETs) in advanced digital circuits are a significant reliability issue for space-based systems. SET pulse widths in silicon-on-insulator (SOI) technologies are often significantly shorter than those in comparable bulk technologies. In this paper, heavy-ion-induced digital single-event transient measurements are presented for a 180-nm fully depleted SOI technology. Upset cross-sections for this technology with and without body-ties are analyzed using 3-D TCAD simulations. Pulse broadening is shown to lengthen the measured SET pulse widths significantly for the circuit without body contacts.
MIT Department
Lincoln Laboratory
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1109/tns.2009.2033688
