Stabilization of highly polarized PbTiO[subscript 3] nanoscale capacitors due to in-plane symmetry breaking at the interface
Name
Polanco-2012-nanoscale capacitors due to in-plane symmetry.pdf
Size
1.43 MB
Format
Adobe PDF
Checksum (MD5)
28aa673dda4c43e37731c345fcb7d0bc
Author(s)
Polanco, Miguel Angel Mendez
Grinberg, Ilya
Kolpak, Alexie M.
Levchenko, Sergey V.
Pynn, Christopher
Rappe, Andrew M.
Date Issued
June 2012
Journal
Physical Review B
Publisher
American Physical Society
Citation
Méndez Polanco, Miguel Angel et al. “Stabilization of Highly Polarized PbTiO[subscript 3] Nanoscale Capacitors Due to In-plane Symmetry Breaking at the Interface.” Physical Review B 85.21 (2012). ©2012 American Physical Society
Version
Final published version
Abstract
Stable ferroelectric (FE) phases in nanometer-thick films would enable ultra-high density and fast FE field effect transistors (FeFETs), and the stability of ferroelectricity in ultrathin films has been under intense theoretical and experimental investigation. Here we predict, using density functional theory calculations, that the low-energy epitaxial PbTiO3 (001)/Pt interface strengthens the electrode-oxide bonds by breaking in-plane symmetry and stabilizes a ground state with enhanced polarization in subnanometer oxide films, with no critical-size limit. Additionally, we show that such enhancement is related to large work function differences between the P[superscript −] and P[superscript +] PbTiO[subscript 3] surfaces, which gives rise to a net polarizing field in the oxide.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1103/PhysRevB.85.214107
