Atomic Structure and Dynamics of Defects in 2D MoS
Name
Grossman_Atomic structure.pdf
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4.1 MB
Format
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Checksum (MD5)
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Author(s)
Zhou, Si
Wang, Shanshan
Li, Huashan
Xu, Wenshuo
Gong, Chuncheng
Grossman, Jeffrey C.
Warner, Jamie H.
Date Issued
July 2017
Journal
ACS Omega
Publisher
American Chemical Society (ACS)
Citation
Zhou, Si et al. “Atomic Structure and Dynamics of Defects in 2D MoS2 Bilayers.” ACS Omega 2, 7 (July 2017): 3315–3324 © 2017 American Chemical Society
Version
Final published version
Abstract
We present a detailed atomic-level study of defects in bilayer MoS[subscript 2] using aberration-corrected transmission electron microscopy at an 80 kV accelerating voltage. Sulfur vacancies are found in both the top and bottom layers in 2H- and 3R-stacked MoS[subscript 2] bilayers. In 3R-stacked bilayers, sulfur vacancies can migrate between layers but more preferably reside in the (Mo-2S) column rather than the (2S) column, indicating more complex vacancy production and migration in the bilayer system. As the point vacancy number increases, aggregation into larger defect structures occurs, and this impacts the interlayer stacking. Competition between compression in one layer from the loss of S atoms and the van der Waals interlayer force causes much less structural deformations than those in the monolayer system. Sulfur vacancy lines neighboring in top and bottom layers introduce less strain compared to those staggered in the same layer. These results show how defect structures in multilayered two-dimensional materials differ from their monolayer form.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Research Laboratory of Electronics
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1021/acsomega.7b00734
