Tabula Rasaforn-Cz silicon-based photovoltaics
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Description
Accepted version
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696.26 KB
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Author(s)
LaSalvia, Vincenzo
Youssef, Amanda
Jensen, Mallory Ann
Looney, Erin E.
Nemeth, William
Page, Matthew
Nam, Wooseok
Buonassisi, Anthony
Stradins, Paul
Date Issued
August 2018
Journal
Progress in Photovoltaics: Research and Applications
Publisher
Wiley
Citation
LaSalvia, Vincenzo et al. "Tabula Rasaforn-Cz silicon-based photovoltaics." Progress in Photovoltaics: Research and Applications 27, 2 (August 2018): 136-143 © 2018 John Wiley & Sons
Version
Author's final manuscript
Abstract
High-temperature annealing, known as Tabula Rasa (TR), proves to be an effective method for dissolving oxygen precipitate nuclei in n-Cz silicon and makes this material resistant to temperature-induced and process-induced lifetime degradation. Tabula Rasa is especially effective in n-Cz wafers with oxygen concentration >15 ppma. Vacancies, self-interstitials, and their aggregates result from TR as a metastable side effect. Temperature-dependent lifetime spectroscopy reveals that these metastable defects have shallow energy levels ~0.12 eV. Their concentrations strongly depend on the ambient gases during TR because of an offset of the thermal equilibrium between vacancies and self-interstitials. However, these metastable defects anneal out at typical cell processing temperatures ≥850°C and have little effect on the bulk lifetime of the processed cell structures. Without dissolving built-in oxygen precipitate nuclei, high-temperature solar cell processing severely degrades the minority carrier lifetimes to below 0.1 millisecond, while TR-treated n-Cz wafers after the cell processing steps exhibit carrier lifetimes above 2.2 milliseconds.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
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DOI of Published Version
https://doi.org/10.1002/pip.3068
