Large-area fabrication of high aspect ratio tantalum photonic crystals for high-temperature selective emitters
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Soljacic_Large-area.pdf
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Author(s)
Rinnerbauer, Veronika
Ndao, Sidy
Yeng, Yi Xiang
Senkevich, Jay J.
Jensen, Klavs F.
Joannopoulos, John D.
Soljacic, Marin
Celanovic, Ivan
Geil, Robert D.
Date Issued
December 2012
Journal
Journal of Vacuum Science & Technology B
Publisher
American Vacuum Society (AVS)
Citation
Rinnerbauer, Veronika et al. “Large-area Fabrication of High Aspect Ratio Tantalum Photonic Crystals for High-temperature Selective Emitters.” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 31.1 (2013): 011802. © 2013 American Vacuum Society
Version
Final published version
Abstract
The authors present highly selective emitters based on two-dimensional tantalum (Ta) photonic crystals, fabricated on 2 in. polycrystalline Ta substrates, for high-temperature applications, e.g., thermophotovoltaic energy conversion. In this study, a fabrication route facilitating large-area photonic crystal fabrication with high fabrication uniformity and accuracy, based on interference lithography and reactive ion etching is discussed. A deep reactive ion etch process for Ta was developed using an SF[subscript 6]/C[subscript 4]F[subscript 8] based Bosch process, which enabled us to achieve ∼ 8.5 μm deep cavities with an aspect ratio of ∼ 8, with very steep and smooth sidewalls. The thermal emitters fabricated by this method show excellent spectral selectivity, enhancement of the emissivity below cut-off approaching unity, and a sharp cut-off between the high emissivity region and the low emissivity region, while maintaining the low intrinsic emissivity of bare Ta above the cut-off wavelength. The experimental results show excellent agreement with numerical simulations.
MIT Department
Massachusetts Institute of Technology. Research Laboratory of Electronics
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DOI of Published Version
https://doi.org/10.1116/1.4771901
