X-ray absorption spectroscopy elucidates the impact of structural disorder on electron mobility in amorphous zinc-tin-oxide thin films
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Buonassisi_X-ray absorption.pdf
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Author(s)
Siah, Sin Cheng
Lee, Sang Woon
Lee, Yun Seog
Heo, Jaeyeong
Shibata, Tomohiro
Segre, Carlo U.
Gordon, Roy G.
Buonassisi, Tonio
Date Issued
June 2014
Journal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Siah, Sin Cheng, Sang Woon Lee, Yun Seog Lee, Jaeyeong Heo, Tomohiro Shibata, Carlo U. Segre, Roy G. Gordon, and Tonio Buonassisi. “X-Ray Absorption Spectroscopy Elucidates the Impact of Structural Disorder on Electron Mobility in Amorphous Zinc-Tin-Oxide Thin Films.” Appl. Phys. Lett. 104, no. 24 (June 16, 2014): 242113. © 2014 AIP Publishing LLC
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Final published version
Abstract
We investigate the correlation between the atomic structures of amorphous zinc-tin-oxide (a-ZTO) thin films grown by atomic layer deposition (ALD) and their electronic transport properties. We perform synchrotron-based X-ray absorption spectroscopy at the K-edges of Zn and Sn with varying [Zn]/[Sn] compositions in a-ZTO thin films. In extended X-ray absorption fine structure (EXAFS) measurements, signal attenuation from higher-order shells confirms the amorphous structure of a-ZTO thin films. Both quantitative EXAFS modeling and X-ray absorption near edge spectroscopy (XANES) reveal that structural disorder around Zn atoms increases with increasing [Sn]. Field- and Hall-effect mobilities are observed to decrease with increasing structural disorder around Zn atoms, suggesting that the degradation in electron mobility may be correlated with structural changes.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
Massachusetts Institute of Technology. Photovoltaic Research Laboratory
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DOI of Published Version
https://doi.org/10.1063/1.4884115
